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NVLUS4C12NTAG
onsemi

NVLUS4C12NTAG

MFR #NVLUS4C12NTAG

FPN#NVLUS4C12NTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 6.8A(Ta) 630mW(Ta) Surface Mount, 6-UDFN
Datasheet
99125-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVLUS4C12N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage3.3V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1172pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6.8A (Ta)
Maximum Drain to Source Resistance9 mOhm @ 9A, 10V
Maximum Gate to Source Threshold Voltage2.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation630mW (Ta)
Maximum Pulse Drain Current43A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type6-UDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.2nC
Typical Gate to Source Charge2.2nC