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onsemi

NVJS4151PT1G

MFR #NVJS4151PT1G

FPN#NVJS4151PT1G-FL

MFRonsemi

Part DescriptionP-Channel 20 V 3.2A (Ta) 1.2W (Ta) Surface Mount SC-88/SC70-6/SOT-363
Datasheet
57018-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVJS4151P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance850pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current3.2A (Ta)
Maximum Drain to Source Resistance67 mOhm @ 2.9A, 4.5V
Maximum Gate to Source Threshold Voltage1.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.2W (Ta)
Maximum Pulse Drain Current13A
Maximum Total Gate Charge10nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 65% from Suppliers use this Dimension
Package TypeSC-88/SC70-6/SOT-363
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.8nC
Typical Gate to Source Charge2.8nC