NVHL080N120SC1
MFR #NVHL080N120SC1
FPN#NVHL080N120SC1-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole, TO-247-3
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVHL080N120SC1 |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Active (NRND) |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 1.2kV |
| Drive Voltage | 20V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | +25V, -15V |
| Input Capacitance | 1670pF |
| Input Capacitance Test Voltage | 800V |
| Life Cycle Status | Active (NRND) |
| Maximum Continuous Drain Current | 44A (Tc) |
| Maximum Drain to Source Resistance | 110 mOhm @ 20A, 20V |
| Maximum Gate to Source Threshold Voltage | 4.3V @ 5mA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 348W (Tc) |
| Maximum Pulse Drain Current | 136A |
| Maximum Total Gate Charge | 56nC |
| Maximum Total Gate Charge Test Voltage | 20V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Typical Gate to Drain Charge | 12nC |
| Typical Gate to Source Charge | 11nC |