NVHL070N120M3S
MFR #NVHL070N120M3S
FPN#NVHL070N120M3S-FL
MFRonsemi
Part DescriptionSIC MOS TO247-3L 70MOHM 1200V M3
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVHL070N120M3S |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 1.2kV |
| Drive Voltage | 18V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | +22V, -10V |
| Input Capacitance | 1230pF |
| Input Capacitance Test Voltage | 800V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 34A (Tc) |
| Maximum Drain to Source Resistance | 87 mOhm @ 15A, 18V |
| Maximum Gate to Source Threshold Voltage | 4.4V @ 7mA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 160W (Tc) |
| Maximum Pulse Drain Current | 98A |
| Maximum Total Gate Charge | 57nC |
| Maximum Total Gate Charge Test Voltage | 18V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TO-247-3 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Typical Gate to Drain Charge | 17nC |
| Typical Gate to Source Charge | 9.6nC |