
NVHL050N65S3F
MFR #NVHL050N65S3F
FPN#NVHL050N65S3F-FL
MFRonsemi
Part DescriptionN-Channel, SUPERFET III MOSFETm 650V, 50 m, 58A
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NVHL050N65S3F | 
| Packaging Type | Tube | 
| Packaging Quantity | 450 | 
| Lifecycle Status | Active | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 650V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±30V | 
| Input Capacitance | 5404pF | 
| Input Capacitance Test Voltage | 400V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 58A (Tc) | 
| Maximum Drain to Source Resistance | 50 mOhm @ 29A, 10V | 
| Maximum Gate to Source Threshold Voltage | 5V @ 1.7mA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 403W (Tc) | 
| Maximum Pulse Drain Current | 145A | 
| Maximum Total Gate Charge | 123nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Package Type | TO-247-3 | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 51.4nC | 
| Typical Gate to Source Charge | 39.5nC | 
