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onsemi

NVH4L075N065SC1

MFR #NVH4L075N065SC1

FPN#NVH4L075N065SC1-FL

MFRonsemi

Part DescriptionSIC MOS TO247-4L 650V
Datasheet
140084-Datasheet
Quote Only
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Multiples of: 450
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVH4L075N065SC1
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-247-4
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage15V, 18V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+22V, -8V
Input Capacitance1196pF
Input Capacitance Test Voltage325V
Maximum Continuous Drain Current38A (Tc)
Maximum Drain to Source Resistance85 mOhm @ 15A, 18V
Maximum Gate to Source Threshold Voltage4.3V @ 5mA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation148W (Tc)
Maximum Pulse Drain Current120A
Maximum Total Gate Charge61nC
Maximum Total Gate Charge Test Voltage18V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge18nC
Typical Gate to Source Charge19nC