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NVD5C486NT4G
MFR #NVD5C486NT4G
FPN#NVD5C486NT4G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 40V 9.2A (Ta), 23A (Tc) 2.9W (Ta), 18.3W (Tc) Surface Mount, TO-252-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVD5C486N |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 40V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 380pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 9.2A (Ta), 23A (Tc) |
| Maximum Drain to Source Resistance | 17.9 mOhm @ 10A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 20µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 2.9W (Ta), 18.3W (Tc) |
| Maximum Pulse Drain Current | 104A |
| Maximum Total Gate Charge | 14nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2.8nC |
| Typical Gate to Source Charge | 4.3nC |
