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NVD5890NT4G
MFR #NVD5890NT4G
FPN#NVD5890NT4G-FL
MFRonsemi
Part DescriptionN-Channel 40 V 24A (Ta), 123A (Tc) 4W (Ta), 107W (Tc) Surface Mount DPAK
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NVD5890N |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 40V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 4760pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 24A (Ta), 123A (Tc) |
| Maximum Drain to Source Resistance | 3.7 mOhm @ 50A, 10V |
| Maximum Gate to Source Threshold Voltage | 3.5V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 4W |
| Maximum Pulse Drain Current | 400A |
| Maximum Total Gate Charge | 100nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 16nC |
| Typical Gate to Source Charge | 17nC |