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NVBLS0D9N08XTXG
onsemi

NVBLS0D9N08XTXG

MFR #NVBLS0D9N08XTXG

FPN#NVBLS0D9N08XTXG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 80V 435A(Tc) 319W(Tc) Surface Mount, 8-HPSOF
Datasheet
211459-Datasheet
Quote Only
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Multiples of: 2000
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Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVBLS0D9N08X
Lifecycle StatusTBD
ROHSCompliant
RoHs Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Package Type8-HPSOF
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance12620pF
Input Capacitance Test Voltage40V
Maximum Continuous Drain Current435A (Tc)
Maximum Drain to Source Resistance890 µOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage3.6V @ 690µA
Maximum Junction Temperature175°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation319W (Tc)
Maximum Pulse Drain Current2.044kA
Maximum Total Gate Charge177nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge28nC
Typical Gate to Source Charge57nC