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NVBLS0D7N04M8TXG
onsemi

NVBLS0D7N04M8TXG

MFR #NVBLS0D7N04M8TXG

FPN#NVBLS0D7N04M8TXG-FL

MFRonsemi

Part DescriptionN-Channel 40 V 240A (Tc) 357W (Tj) Surface Mount 8-HPSOF
Datasheet
56980-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVBLS0D7N04M8
Packaging TypeTape and Reel
Packaging Quantity2000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance12000pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current240A (Tc)
Maximum Drain to Source Resistance750 µOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation357W (Tj)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge188nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-HPSOF
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge16nC
Typical Gate to Source Charge66nC