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onsemi

NVBG070N120M3S

MFR #NVBG070N120M3S

FPN#NVBG070N120M3S-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 1.2kV 36A (Tc) TO-263-8
Datasheet
117433-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVBG070N120M3S
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage1.2kV
Drive Voltage18V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+22V, -10V
Input Capacitance1230pF
Input Capacitance Test Voltage800V
Life Cycle StatusActive
Maximum Continuous Drain Current36A (Tc)
Maximum Drain to Source Resistance87 mOhm @ 15A, 18V
Maximum Gate to Source Threshold Voltage4.4V @ 7mA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation172W (Tc)
Maximum Pulse Drain Current93A
Maximum Total Gate Charge57nC
Maximum Total Gate Charge Test Voltage18V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeD2PAK-7
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge17nC
Typical Gate to Source Charge9.6nC