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onsemi

NVATS5A107PLZT4G

MFR #NVATS5A107PLZT4G

FPN#NVATS5A107PLZT4G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 40V 55A (Ta) TO-252-3 T/R
Datasheet
100361-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVATS5A107PLZ
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2400pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current55A (Ta)
Maximum Drain to Source Resistance17 mOhm @ 25A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation60W (Tc)
Maximum Pulse Drain Current165A
Maximum Total Gate Charge47nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK/ATPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8nC
Typical Gate to Source Charge11.5nC