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NTTFS6H860NTAG
onsemi

NTTFS6H860NTAG

MFR #NTTFS6H860NTAG

FPN#NTTFS6H860NTAG-FL

MFRonsemi

Part DescriptionN-Channel 80 V 8A (Ta), 30A (Tc) 3.1W (Ta), 46W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
56900-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS6H860N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance510pF
Input Capacitance Test Voltage40V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current8A (Ta), 30A (Tc)
Maximum Drain to Source Resistance21.1 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage4V @ 30µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.1W (Ta), 46W (Tc)
Maximum Pulse Drain Current119A
Maximum Total Gate Charge8.7nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.6nC
Typical Gate to Source Charge2.8nC