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NTTFS6H860NLTAG
onsemi

NTTFS6H860NLTAG

MFR #NTTFS6H860NLTAG

FPN#NTTFS6H860NLTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 80V 8.1A (Ta), 30A (Tc) 8-SON
Datasheet
137228-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS6H860NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance610pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current8.1A (Ta), 30A (Tc)
Maximum Drain to Source Resistance20 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage2V @ 30µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 42W (Tc)
Maximum Pulse Drain Current122A
Maximum Total Gate Charge12nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC
Typical Gate to Source Charge2nC