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NTTFS5116PLTAG
onsemi

NTTFS5116PLTAG

MFR #NTTFS5116PLTAG

FPN#NTTFS5116PLTAG-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount, 8-WDFN
Datasheet
56894-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS5116PL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1258pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current5.7A (Ta)
Maximum Drain to Source Resistance52 mOhm @ 6A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.2W (Ta), 40W (Tc)
Maximum Pulse Drain Current76A
Maximum Total Gate Charge25nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7nC
Typical Gate to Source Charge4nC