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NTS4101PT1G
onsemi

NTS4101PT1G

MFR #NTS4101PT1G

FPN#NTS4101PT1G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 1.37A (Ta) SOT-323
Datasheet
137019-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTS4101P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance840pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current1.37A (Ta)
Maximum Drain to Source Resistance120 mOhm @ 1A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation329mW (Ta)
Maximum Pulse Drain Current4A
Maximum Total Gate Charge9nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSC-70 (SOT323)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.5nC
Typical Gate to Source Charge1nC