_medium_204x204px.png)
NTR5105PT1G
MFR #NTR5105PT1G
FPN#NTR5105PT1G-FL
MFRonsemi
Part DescriptionP-Channel 60 V 196mA (Ta) 347mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTR5105P |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 30.3pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 196mA (Ta) |
| Maximum Drain to Source Resistance | 5 Ohm @ 100mA, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 347mW (Ta) |
| Maximum Pulse Drain Current | 784mA |
| Maximum Total Gate Charge | 1nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | SOT-23-3 (TO-236) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 300pC |
| Typical Gate to Source Charge | 400pC |