(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTPF360N80S3Z
onsemi

NTPF360N80S3Z

MFR #NTPF360N80S3Z

FPN#NTPF360N80S3Z-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 800V 13A (Tj) TO-220-3
Datasheet
165762-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTPF360N80S3Z
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage800V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1143pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current13A (Tj)
Maximum Drain to Source Resistance360 mOhm @ 6.5A, 10V
Maximum Gate to Source Threshold Voltage3.8V @ 300µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation31W (Tc)
Maximum Pulse Drain Current32.5A
Maximum Total Gate Charge25.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220FP
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.3nC
Typical Gate to Source Charge5.3nC