onsemi
NTNS3A91PZT5G
MFR #NTNS3A91PZT5G
FPN#NTNS3A91PZT5G-FL
MFRonsemi
Part DescriptionSmall Signal Field-Effect Transistor, 0.223A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTNS3A91PZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 8000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 1.5V, 4.5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±8V |
| Input Capacitance | 41pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 223mA (Ta) |
| Maximum Drain to Source Resistance | 1.6 Ohm @ 100mA, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 121mW (Ta) |
| Maximum Pulse Drain Current | 669mA |
| Maximum Total Gate Charge | 1.1nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 3-XLLGA (0.62x0.62) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 900pC |
| Typical Gate to Source Charge | 200pC |