
onsemi
NTNS3166NZT5G
MFR #NTNS3166NZT5G
FPN#NTNS3166NZT5G-FL
MFRonsemi
Part DescriptionMOSFET N-CH 20V 0.361A SOT883
Datasheet
Quote Only
more info
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTNS3166NZT5G |
| Packaging Type | N/A |
| Packaging Quantity | N/A |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Not Affected |
| Package Type | SOT-883 (XDFN3) (1x0.6) |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 1.5V, 4.5V |
| FET Feature | N/A |
| FET Options | N/A |
| FET Type | Single |
| Gate to Source Voltage | ±8V |
| Input Capacitance | 24pF |
| Input Capacitance Test Voltage | 10V |
| Maximum Continuous Drain Current | N/A |
| Maximum Drain to Source Resistance | N/A |
| Maximum Gate to Source Threshold Voltage | N/A |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | N/A |
| Maximum Pulse Drain Current | 1.082A |
| Maximum Total Gate Charge | 800pC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 100pC |
| Typical Gate to Source Charge | 200pC |
