loading content
onsemi

NTNS1K1N021ZT5G

MFR #NTNS1K1N021ZT5G

FPN#NTNS1K1N021ZT5G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 20V 253mA (Ta) 3-SON
Datasheet
99071-Datasheet
Quote Only
more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTNS1K1N021Z
Packaging TypeN/A
Packaging QuantityN/A
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusNot Affected
Package Type3-XLLGA (0.62x0.62)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance13.3pF
Input Capacitance Test Voltage15V
Maximum Continuous Drain Current253mA (Ta)
Maximum Drain to Source Resistance1.1 Ohm @ 100mA, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation120mW (Ta)
Maximum Pulse Drain Current673mA
Maximum Total Gate Charge740pC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge90pC
Typical Gate to Source Charge170pC