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onsemi

NTND31200PZTAG

MFR #NTND31200PZTAG

FPN#NTND31200PZTAG-FL

MFRonsemi

Part DescriptionNTND31200PZ - DUAL, P-CHANNELL S
Datasheet
56804-Datasheet
Quote Onlymore info
Multiples of: 8000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTND31200PZ
Packaging TypeTape and Reel
Packaging Quantity8000
Lifecycle StatusActive (Unconfirmed)
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 P-Channel
Drain Source Voltage20V
Drive Voltage1.2V, 4.5V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±8V
Input Capacitance12.8pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive (Unconfirmed)
Maximum Continuous Drain Current127mA (Ta)
Maximum Drain to Source Resistance5 Ohm @ 100mA, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation125mW (Ta)
Maximum Pulse Drain Current488mA
Maximum Total Gate ChargeN/A
Maximum Total Gate Charge Test VoltageN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type6-XLLGA (0.9x0.65)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A