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onsemi

NTMT190N65S3H

MFR #NTMT190N65S3H

FPN#NTMT190N65S3H-FL

MFRonsemi

Part DescriptionPOWER MOSFET, N-CHANNEL, SUPERFE
Datasheet
122090-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMT190N65S3H
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1600pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current16A (Tc)
Maximum Drain to Source Resistance190 mOhm @ 8A, 10V
Maximum Gate to Source Threshold Voltage4V @ 1.4mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation129W (Tc)
Maximum Pulse Drain Current45A
Maximum Total Gate Charge31nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type4-TDFN (8x8)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.9nC
Typical Gate to Source Charge7.1nC