onsemi
NTMT150N65S3HF
MFR #NTMT150N65S3HF
FPN#NTMT150N65S3HF-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 650V 24A(Tc) 192W(Tc) Surface Mount, 4-PQFN
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTMT150N65S3HF |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | 4-PQFN (8x8) |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 650V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±30V |
| Input Capacitance | 1985pF |
| Input Capacitance Test Voltage | 400V |
| Maximum Continuous Drain Current | 24A (Tc) |
| Maximum Drain to Source Resistance | 150 mOhm @ 12A, 10V |
| Maximum Gate to Source Threshold Voltage | 5V @ 540µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 192W (Tc) |
| Maximum Pulse Drain Current | 60A |
| Maximum Total Gate Charge | 43nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 17nC |
| Typical Gate to Source Charge | 13nC |