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NTMS5P02R2G
onsemi

NTMS5P02R2G

MFR #NTMS5P02R2G

FPN#NTMS5P02R2G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 3.95A (Ta) 8-SOIC T/R
Datasheet
168602-Datasheet
Quote Only
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Multiples of: 2500
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMS5P02
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusNot Affected
Package Type8-SOIC
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±10V
Input Capacitance1900pF
Input Capacitance Test Voltage16V
Maximum Continuous Drain Current3.95A (Ta)
Maximum Drain to Source Resistance33 mOhm @ 5.4A, 4.5V
Maximum Gate to Source Threshold Voltage1.25V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation790mW (Ta)
Maximum Pulse Drain Current28A
Maximum Total Gate Charge35nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7nC
Typical Gate to Source Charge4nC