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NTMJS2D5N06CLTWG
onsemi

NTMJS2D5N06CLTWG

MFR #NTMJS2D5N06CLTWG

FPN#NTMJS2D5N06CLTWG-FL

MFRonsemi

Part DescriptionMOSFET N-CH 60V 31A/164A 8LFPAK
Datasheet
165739-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMJS2D5N06CL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-LFPAK
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3600pF
Input Capacitance Test VoltageN/A
Maximum Continuous Drain Current31A (Ta), 164A (Tc)
Maximum Drain to Source Resistance2.4 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage2V @ 135µA
Maximum Junction TemperatureN/A
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.9W (Ta), 113W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge52nC
Maximum Total Gate Charge Test VoltageN/A
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A