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NTMFSC004N08MC
onsemi

NTMFSC004N08MC

MFR #NTMFSC004N08MC

FPN#NTMFSC004N08MC-FL

MFRonsemi

Part DescriptionN-Channel 80 V 86A (Ta), 136A (Tc) 51W (Ta), 127W (Tc) Surface Mount 8-DFN (5x6.15)
Datasheet
56771-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFSC004N08MC
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2980pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current86A (Ta), 136A (Tc)
Maximum Drain to Source Resistance4 mOhm @ 44A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation51W (Ta), 127W (Tc)
Maximum Pulse Drain Current487A
Maximum Total Gate Charge43.4nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-DFN (5x6.15)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7nC
Typical Gate to Source Charge15nC