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NTMFS5H431NLT1G
onsemi

NTMFS5H431NLT1G

MFR #NTMFS5H431NLT1G

FPN#NTMFS5H431NLT1G-FL

MFRonsemi

Part DescriptionMOSFET N-CH 40V 23A/106A 5DFN
Datasheet
99061-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS5H431NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type5-DFN (5x6) (8-SOFL)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1730pF
Input Capacitance Test Voltage20V
Maximum Continuous Drain Current23A (Ta), 106A (Tc)
Maximum Drain to Source Resistance3.3 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3W (Ta), 66W (Tc)
Maximum Pulse Drain Current600A
Maximum Total Gate Charge28nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.4nC
Typical Gate to Source Charge5.6nC