(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTMFS5C612NLT1G-01
onsemi

NTMFS5C612NLT1G-01

MFR #NTMFS5C612NLT1G-01

FPN#NTMFS5C612NLT1G-01-FL

MFRonsemi

Part DescriptionN-Channel 60 V 36A (Ta), 235A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
122078-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS5C612NL
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6660pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current36A (Ta), 235A (Tc)
Maximum Drain to Source Resistance1.5 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 167W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge91nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge10.9nC
Typical Gate to Source Charge17.1nC