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NTMFS4C810NAT3G-01
onsemi

NTMFS4C810NAT3G-01

MFR #NTMFS4C810NAT3G-01

FPN#NTMFS4C810NAT3G-01-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 8.2A (Ta), 46A (Tc), 8-SON
Datasheet
56742-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4C810NA
Lifecycle StatusActive
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance987pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current8.2A (Ta), 46A (Tc)
Maximum Drain to Source Resistance5.88 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation750mW (Ta), 23.6W (Tc)
Maximum Pulse Drain Current132A
Maximum Total Gate Charge18.6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.8nC
Typical Gate to Source Charge2.8nC