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NTMFS4C302NT1G
onsemi

NTMFS4C302NT1G

MFR #NTMFS4C302NT1G

FPN#NTMFS4C302NT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 41A(Ta) 230A(Tc) 3.13W(Ta) 96W(Tc) Surface Mount, 5-DFN
Datasheet
99045-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4C302N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance5780pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current41A (Ta), 230A (Tc)
Maximum Drain to Source Resistance1.15 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.13W (Ta), 96W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge82nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7nC
Typical Gate to Source Charge16nC