(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTMFS4C06NCT1G
onsemi

NTMFS4C06NCT1G

MFR #NTMFS4C06NCT1G

FPN#NTMFS4C06NCT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 20A(Ta) 69A(Tc) 2.55W(Ta) 30.5W(Tc) Surface Mount, 5-DFN
Datasheet
101202-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4C06NC
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1683pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current11A (Ta), 69A (Tc)
Maximum Drain to Source Resistance4 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation770mW (Ta), 30.5W (Tc)
Maximum Pulse Drain Current200A
Maximum Total Gate Charge11.6nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4nC
Typical Gate to Source Charge4.7nC