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NTMFD020N06CT1G
onsemi

NTMFD020N06CT1G

MFR #NTMFD020N06CT1G

FPN#NTMFD020N06CT1G-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 60V 8A (Ta), 27A (Tc) 8-SON T/R
Datasheet
56677-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFD020N06C
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance355pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current8A (Ta), 27A (Tc)
Maximum Drain to Source Resistance20.3 mOhm @ 4A, 10V
Maximum Gate to Source Threshold Voltage4V @ 20µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 31W (Tc)
Maximum Pulse Drain Current98A
Maximum Total Gate Charge5.8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge530pC
Typical Gate to Source Charge2.3nC