
NTMD4820NR2G
MFR #NTMD4820NR2G
FPN#NTMD4820NR2G-FL
MFRonsemi
Part DescriptionMosfet Array 2 N-Channel (Dual) 30V 4.9A 750mW Surface Mount 8-SOIC
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTMD4820N |
Packaging Type | Tape and Reel |
Packaging Quantity | 2500 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | 2 N-Channel |
Drain Source Voltage | 30V |
Drive Voltage | 4.5V, 10V |
FET Feature | Logic Level Gate |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | ±20V |
Input Capacitance | 940pF |
Input Capacitance Test Voltage | 15V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 4.9A |
Maximum Drain to Source Resistance | 20 mOhm @ 7.5A, 10V |
Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 750mW |
Maximum Pulse Drain Current | 32A |
Maximum Total Gate Charge | 7.7nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
PK Package Dimensions Note | Popular package size 61% from Suppliers use this Dimension |
Package Type | 8-SOIC |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 3.2nC |
Typical Gate to Source Charge | 3.3nC |