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onsemi
NTLUS4C16NTAG
MFR #NTLUS4C16NTAG
FPN#NTLUS4C16NTAG-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 30V 9.4A(Ta) 2.37W(Ta) Surface Mount, 6-UDFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTLUS4C16N |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 1.8V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±12V |
| Input Capacitance | 690pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 6.1A (Ta) |
| Maximum Drain to Source Resistance | 11.4 mOhm @ 8A, 10V |
| Maximum Gate to Source Threshold Voltage | 1.1V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 650mW (Ta) |
| Maximum Pulse Drain Current | 28A |
| Maximum Total Gate Charge | 7.5nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | 6-UDFN (1.6x1.6) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 1.4nC |
| Typical Gate to Source Charge | 1.3nC |
