(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTLUS3A90PZTAG
onsemi

NTLUS3A90PZTAG

MFR #NTLUS3A90PZTAG

FPN#NTLUS3A90PZTAG-FL

MFRonsemi

Part DescriptionP-Channel 20 V 2.6A (Ta) 600mW (Ta) Surface Mount 6-UDFN (1.6x1.6)
Datasheet
56670-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTLUS3A90PZ
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance950pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2.6A (Ta)
Maximum Drain to Source Resistance62 mOhm @ 4A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation600mW (Ta)
Maximum Pulse Drain Current17A
Maximum Total Gate Charge12.3nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type6-UDFN (1.6x1.6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.3nC
Typical Gate to Source Charge3.3nC