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onsemi

NTJS3151PT1G

MFR #NTJS3151PT1G

FPN#NTJS3151PT1G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 12V 2.7A (Ta) SOT-363 T/R
Datasheet
168522-Datasheet
Quote Only
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Multiples of: 3000
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Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTJS3151P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusNot Affected
Package TypeSC-88/SC70-6/SOT-363
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage12V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance850pF
Input Capacitance Test Voltage12V
Maximum Continuous Drain Current2.7A (Ta)
Maximum Drain to Source Resistance60 mOhm @ 3.3A, 4.5V
Maximum Gate to Source Threshold Voltage400mV @ 100µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation625mW (Ta)
Maximum Pulse Drain Current8A
Maximum Total Gate Charge8.6nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 65% from Suppliers use this Dimension
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.2nC
Typical Gate to Source Charge2.2nC