
NTJD4001NT1G
MFR #NTJD4001NT1G
FPN#NTJD4001NT1G-FL
MFRonsemi
Part DescriptionMOSFET Array 2 N-Channel 30V 250mA 272mW Surface Mount, 6-TSSOP
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTJD4001N |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | 2 N-Channel |
Drain Source Voltage | 30V |
Drive Voltage | 2.5V, 4V |
FET Feature | Standard |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | ±20V |
Input Capacitance | 33pF |
Input Capacitance Test Voltage | 5V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 250mA (Ta) |
Maximum Drain to Source Resistance | 1.5 Ohm @ 10mA, 4V |
Maximum Gate to Source Threshold Voltage | 1.5V @ 100µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 272mW (Ta) |
Maximum Pulse Drain Current | 600mA |
Maximum Total Gate Charge | 1.3nC |
Maximum Total Gate Charge Test Voltage | 5V |
Minimum Junction Temperature | -55°C (TJ) |
PK Package Dimensions Note | Popular package size 65% from Suppliers use this Dimension |
Package Type | SC-88/SC70-6/SOT-363 |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 200pC |
Typical Gate to Source Charge | 300pC |