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onsemi

NTHS5443T1G

MFR #NTHS5443T1G

FPN#NTHS5443T1G-FL

MFRonsemi

Part DescriptionP-Channel 20 V 3.6A (Ta) 1.3W (Ta) Surface Mount ChipFET
Datasheet
56643-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTHS5443
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Life Cycle StatusObsolete
Maximum Continuous Drain Current3.6A (Ta)
Maximum Drain to Source Resistance65 mOhm @ 3.6A, 4.5V
Maximum Gate to Source Threshold Voltage600mV @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.3W (Ta)
Maximum Pulse Drain Current15A
Maximum Total Gate Charge12nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeChipFET™
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.2nC
Typical Gate to Source Charge900pC