
NTHS5404T1G
MFR #NTHS5404T1G
FPN#NTHS5404T1G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 20V 5.2A(Ta) 1.3W(Ta) Surface Mount, 8-SMD
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NTHS5404T1 | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 3000 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 20V | 
| Drive Voltage | 2.5V, 4.5V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±12V | 
| Input Capacitance | 740pF | 
| Input Capacitance Test Voltage | 16V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 5.2A (Ta) | 
| Maximum Drain to Source Resistance | 30 mOhm @ 5.2A, 4.5V | 
| Maximum Gate to Source Threshold Voltage | 600mV @ 250µA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 1.3W (Ta) | 
| Maximum Pulse Drain Current | 20A | 
| Maximum Total Gate Charge | 18nC | 
| Maximum Total Gate Charge Test Voltage | 4.5V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Package Type | ChipFET™ | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 3.2nC | 
| Typical Gate to Source Charge | 2.4nC | 
