
onsemi
NTHLD040N65S3HF
MFR #NTHLD040N65S3HF
FPN#NTHLD040N65S3HF-FL
MFRonsemi
Part DescriptionN-Channel 650 V 65A (Tc) 446W (Tc) Through Hole TO-247-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTHLD040N65S3HF |
| Packaging Type | Tube |
| Packaging Quantity | 30 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 650V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±30V |
| Input Capacitance | 5945pF |
| Input Capacitance Test Voltage | 400V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 65A (Tc) |
| Maximum Drain to Source Resistance | 40 mOhm @ 32.5A, 10V |
| Maximum Gate to Source Threshold Voltage | 5V @ 2.1mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 446W (Tc) |
| Maximum Pulse Drain Current | 162.5A |
| Maximum Total Gate Charge | 159nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-247 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 64nC |
| Typical Gate to Source Charge | 46nC |
