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NTHL190N65S3HF
onsemi

NTHL190N65S3HF

MFR #NTHL190N65S3HF

FPN#NTHL190N65S3HF-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 20A (Tc) 162W (Tc) Through Hole, TO-247-3
Datasheet
101237-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTHL190N65S3HF
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1610pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current20A (Tc)
Maximum Drain to Source Resistance190 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage5V @ 430µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation162W (Tc)
Maximum Pulse Drain Current50A
Maximum Total Gate Charge34nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge13nC
Typical Gate to Source Charge11nC