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NTHL125N65S3H
onsemi

NTHL125N65S3H

MFR #NTHL125N65S3H

FPN#NTHL125N65S3H-FL

MFRonsemi

Part DescriptionPOWER MOSFET, N-CHANNEL, SUPERFE
Datasheet
99336-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTHL125N65S3H
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-247-3
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2200pF
Input Capacitance Test Voltage400V
Maximum Continuous Drain Current24A (Tc)
Maximum Drain to Source Resistance125 mOhm @ 12A, 10V
Maximum Gate to Source Threshold Voltage4V @ 2.1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation171W (Tc)
Maximum Pulse Drain Current67A
Maximum Total Gate Charge44nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge12nC
Typical Gate to Source Charge11nC