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onsemi

NTH4L014N120M3P

MFR #NTH4L014N120M3P

FPN#NTH4L014N120M3P-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 1.2kV 152A (Tc) TO247-4 Tube
Datasheet
56627-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTH4L014N120M3P
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage1.2kV
Drive Voltage15V, 18V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+22V, -10V
Input Capacitance6230pF
Input Capacitance Test Voltage800V
Life Cycle StatusActive
Maximum Continuous Drain Current152A (Tc)
Maximum Drain to Source Resistance20 mOhm @ 74A, 18V
Maximum Gate to Source Threshold Voltage4.63V @ 37mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation686W (Tc)
Maximum Pulse Drain Current407A
Maximum Total Gate Charge322nC
Maximum Total Gate Charge Test Voltage18V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-4
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge81nC
Typical Gate to Source Charge51nC