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NTGS5120PT1G
onsemi

NTGS5120PT1G

MFR #NTGS5120PT1G

FPN#NTGS5120PT1G-FL

MFRonsemi

Part DescriptionMOSFET P-CH 60V 1.8A 6TSOP
Datasheet
165697-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTGS5120P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance942pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current1.8A (Ta)
Maximum Drain to Source Resistance111 mOhm @ 2.9A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation600mW (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge18.1nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type6-TSOP
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.6nC
Typical Gate to Source Charge2.7nC