
NTD4858N-35G
MFR #NTD4858N-35G
FPN#NTD4858N-35G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 25 V 11.2A (Ta) 73A (Tc) 1.3W (Ta) 54.5W (Tc) Through Hole, TO-251-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTD4858N |
Packaging Type | Tube |
Packaging Quantity | 75 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 25V |
Drive Voltage | 4.5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1563pF |
Input Capacitance Test Voltage | 12V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 11.2A (Ta), 73A (Tc) |
Maximum Drain to Source Resistance | 6.2 mOhm @ 30A, 10V |
Maximum Gate to Source Threshold Voltage | 2.5V @ 250µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 1.3W (Ta), 54.5W (Tc) |
Maximum Pulse Drain Current | 146A |
Maximum Total Gate Charge | 19.2nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | I-Pak |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 5.2nC |
Typical Gate to Source Charge | 5.2nC |