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NTD4858N-35G

NTD4858N-35G

MFR #NTD4858N-35G

FPN#NTD4858N-35G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 25 V 11.2A (Ta) 73A (Tc) 1.3W (Ta) 54.5W (Tc) Through Hole, TO-251-3
Quote Onlymore info
Multiples of: 75more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTD4858N
Packaging TypeTube
Packaging Quantity75
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1563pF
Input Capacitance Test Voltage12V
Life Cycle StatusObsolete
Maximum Continuous Drain Current11.2A (Ta), 73A (Tc)
Maximum Drain to Source Resistance6.2 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation1.3W (Ta), 54.5W (Tc)
Maximum Pulse Drain Current146A
Maximum Total Gate Charge19.2nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.2nC
Typical Gate to Source Charge5.2nC