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NTD4302T4G
onsemi

NTD4302T4G

MFR #NTD4302T4G

FPN#NTD4302T4G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 8.4A (Ta), 68A (Tc) TO-252-3 T/R
Datasheet
169905-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTD4302
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2400pF
Input Capacitance Test Voltage24V
Life Cycle StatusObsolete
Maximum Continuous Drain Current8.4A (Ta), 68A (Tc)
Maximum Drain to Source Resistance10 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.04W (Ta), 75W (Tc)
Maximum Pulse Drain Current36A
Maximum Total Gate Charge80nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK (SINGLE GAUGE)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge15nC
Typical Gate to Source Charge5.5nC