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NTD24N06T4G
MFR #NTD24N06T4G
FPN#NTD24N06T4G-FL
MFRonsemi
Part DescriptionN-Channel 60V 24A (Ta) 1.36W (Ta) 62.5W (Tj) Surface Mount, TO-252-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTD24N06 |
Packaging Type | Tape and Reel |
Packaging Quantity | 2500 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1200pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 24A (Ta) |
Maximum Drain to Source Resistance | 42 mOhm @ 10A, 10V |
Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 1.36W (Ta), 62.5W (Tj) |
Maximum Pulse Drain Current | 80A |
Maximum Total Gate Charge | 48nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | DPAK |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | N/A |
Typical Gate to Source Charge | N/A |