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NTD20N03L27T4G
MFR #NTD20N03L27T4G
FPN#NTD20N03L27T4G-FL
MFRonsemi
Part DescriptionN-Channel 30 V 20A (Ta) 1.75W (Ta), 74W (Tc) Surface Mount DPAK
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTD20N03L27 |
Packaging Type | Tape and Reel |
Packaging Quantity | 2500 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 30V |
Drive Voltage | 4V, 5V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1260pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 20A (Ta) |
Maximum Drain to Source Resistance | 27 mOhm @ 10A, 5V |
Maximum Gate to Source Threshold Voltage | 2V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1.75W (Ta), 74W (Tc) |
Maximum Pulse Drain Current | 60A |
Maximum Total Gate Charge | 18.9nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | DPAK |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | N/A |
Typical Gate to Source Charge | N/A |