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NTBV75N06T4G
onsemi

NTBV75N06T4G

MFR #NTBV75N06T4G

FPN#NTBV75N06T4G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 75A (Ta) TO-263-3 T/R
Datasheet
100335-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTBV75N06
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance4510pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current75A (Ta)
Maximum Drain to Source Resistance9.5 mOhm @ 37.5A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 214W (Tj)
Maximum Pulse Drain Current225A
Maximum Total Gate Charge130nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A